BD433-BP Details_BD433-BP PDF Document_Micro Commercial Co-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	22 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 2A
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 2A, 1V
Power - Max	1.25 W
Frequency - Transition	3MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-126

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