NTE102A Details_NTE102A PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	-
Vce Saturation (Max) @ Ib, Ic	170mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	25µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	69 @ 300mA, 0V
Power - Max	650 mW
Frequency - Transition	-
Operating Temperature	90°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-1-3 Metal Can
Supplier Device Package	TO-1

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