MJ16018 Details_MJ16018 PDF Document_Solid State Inc.-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Box
Transistor Type	NPN
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	750 V
Vce Saturation (Max) @ Ib, Ic	5V @ 5A, 10A
Current - Collector Cutoff (Max)	250µA
DC Current Gain (hFE) (Min) @ Ic, Vce	4 @ 5A, 5V
Power - Max	175 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AA, TO-3
Supplier Device Package	TO-3

Other

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