BU323Z Details_BU323Z PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	350 V
Vce Saturation (Max) @ Ib, Ic	1.7V @ 250mA, 10A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	500 @ 5A, 4.6V
Power - Max	150 W
Frequency - Transition	2MHz
Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-218-3
Supplier Device Package	SOT-93

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