FJL4315OTU Details_FJL4315OTU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	17 A
Voltage - Collector Emitter Breakdown (Max)	250 V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Current - Collector Cutoff (Max)	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Power - Max	150 W
Frequency - Transition	30MHz
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	TO-264-3

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