NTE291 Details_NTE291 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	120 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 2A, 4A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1.5A, 4V
Power - Max	1.8 W
Frequency - Transition	4MHz
Operating Temperature	-65°C ~ 150°C
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

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