15C01C-TB-E Details_15C01C-TB-E PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	700 mA
Voltage - Collector Emitter Breakdown (Max)	15 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 200mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 10mA, 2V
Power - Max	300 mW
Frequency - Transition	330MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	3-CP

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