2N5550G Details_2N5550G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	600 mA
Voltage - Collector Emitter Breakdown (Max)	140 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V
Power - Max	625 mW
Frequency - Transition	300MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

Other

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