2N6668 TIN/LEAD Details_2N6668 TIN/LEAD PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP - Darlington
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	-
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	65 W
Frequency - Transition	20MHz
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

Other

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