BSP32,115 Details_BSP32,115 PDF Document_NXP Semiconductors-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 100mA, 5V
Power - Max	1.3 W
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223

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