2SD145000A Details_2SD145000A PDF Document_Panasonic Electronic Components-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Cut Tape (CT)Tape & Box (TB)
Transistor Type	NPN
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	20 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 20mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 2V
Power - Max	300 mW
Frequency - Transition	200MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	3-SSIP
Supplier Device Package	NS-B1

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