JAN2N6250T1 Details_JAN2N6250T1 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/510
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	275 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1.25A, 10A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 10A, 3V
Power - Max	6 W
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package	TO-254AA

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