MJ21196G Details_MJ21196G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Current - Collector (Ic) (Max)	16 A
Voltage - Collector Emitter Breakdown (Max)	250 V
Vce Saturation (Max) @ Ib, Ic	4V @ 3.2A, 16A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 8A, 5V
Power - Max	250 W
Frequency - Transition	4MHz
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AA, TO-3
Supplier Device Package	TO-204 (TO-3)

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