NTE2550 Details_NTE2550 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	400 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 70mA, 7A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 7A, 2V
Power - Max	50 W
Frequency - Transition	10MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220 Full Pack

Other

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