FJAF4310OTU Details_FJAF4310OTU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	140 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 500mA, 5A
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 3A, 4V
Power - Max	80 W
Frequency - Transition	30MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Supplier Device Package	TO-3PF

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