CZT5551E TR Details_CZT5551E TR PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Current - Collector (Ic) (Max)	600 mA
Voltage - Collector Emitter Breakdown (Max)	220 V
Vce Saturation (Max) @ Ib, Ic	100mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 10mA, 5V
Power - Max	2 W
Frequency - Transition	300MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223

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