MMBT4356 Details_MMBT4356 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	PNP
Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 10V
Power - Max	350 mW
Frequency - Transition	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

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