BCW67BE6327HTSA1 Details_BCW67BE6327HTSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	PNP
Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	32 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 100mA, 1V
Power - Max	330 mW
Frequency - Transition	200MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

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