MJE210STU Details_MJE210STU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	MJE210
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	5 A
Voltage - Collector Emitter Breakdown (Max)	25 V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1A, 5A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 500mA, 1V
Power - Max	15 W
Frequency - Transition	65MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-126-3

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