MJF15030G Details_MJF15030G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	150 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 2V
Power - Max	2 W
Frequency - Transition	30MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FP

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