BDV65B Details_BDV65B PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	12 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	-
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V
Power - Max	125 W
Frequency - Transition	60MHz
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-218-3
Supplier Device Package	TO-218

Other

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