2DD1766P-13 Details_2DD1766P-13 PDF Document_Diodes Incorporated-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	NPN
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	32 V
Vce Saturation (Max) @ Ib, Ic	800mV @ 200mA, 2A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	82 @ 500mA, 3V
Power - Max	1 W
Frequency - Transition	220MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	SOT-89-3

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