MBT35200MT2G Details_MBT35200MT2G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	PNP
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	35 V
Vce Saturation (Max) @ Ib, Ic	310mV @ 20mA, 2A
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1.5A, 1.5V
Power - Max	625 mW
Frequency - Transition	100MHz
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Supplier Device Package	6-TSOP

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