BCP49H6359XTMA1 Details_BCP49H6359XTMA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	1V @ 100µA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 100mA, 5V
Power - Max	1.5 W
Frequency - Transition	200MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	PG-SOT223-4

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