2N2896 Details_2N2896 PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	90 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 15mA, 150mA
Current - Collector Cutoff (Max)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 150mA, 10V
Power - Max	1.8 W
Frequency - Transition	120MHz
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18

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