NTE75 Details_NTE75 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	5 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 500mA, 5A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 5V
Power - Max	2 W
Frequency - Transition	120MHz
Operating Temperature	-65°C ~ 200°C
Mounting Type	Stud Mount
Package / Case	TO-111-4, Stud
Supplier Device Package	TO-111

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