KSC5030FRTU Details_KSC5030FRTU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	6 A
Voltage - Collector Emitter Breakdown (Max)	800 V
Vce Saturation (Max) @ Ib, Ic	2V @ 600mA, 3A
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 600mA, 5V
Power - Max	60 W
Frequency - Transition	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Supplier Device Package	TO-3PF

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