JAN2N5667S Details_JAN2N5667S PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/455
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	5 A
Voltage - Collector Emitter Breakdown (Max)	300 V
Vce Saturation (Max) @ Ib, Ic	1V @ 1A, 5A
Current - Collector Cutoff (Max)	200nA
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1A, 5V
Power - Max	1.2 W
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39 (TO-205AD)

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