JAN2N6052 Details_JAN2N6052 PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/501
Package	Bulk
Transistor Type	PNP - Darlington
Current - Collector (Ic) (Max)	12 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	3V @ 120mA, 12A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 6A, 3V
Power - Max	150 W
Frequency - Transition	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3
Supplier Device Package	TO-3 (TO-204AA)

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