MMBTA14LT1 Details_MMBTA14LT1 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	300 mA
Voltage - Collector Emitter Breakdown (Max)	30 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 10mA, 5V
Power - Max	225 mW
Frequency - Transition	125MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

Other

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