ZTX857 Details_ZTX857 PDF Document_Diodes Incorporated-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	300 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 600mA, 3A
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 10V
Power - Max	1.2 W
Frequency - Transition	80MHz
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	E-Line-3
Supplier Device Package	E-Line (TO-92 compatible)

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