CP307-2N5308-WN Details_CP307-2N5308-WN PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	300 mA
Voltage - Collector Emitter Breakdown (Max)	40 V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	20000 @ 100mA, 5V
Power - Max	625 mW
Frequency - Transition	60MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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