TIP111 Details_TIP111 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)	2mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 1A, 4V
Power - Max	50 W
Frequency - Transition	25MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

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