2SA2056(TE85L,F) Details_2SA2056(TE85L,F) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)
Transistor Type	PNP
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	200mV @ 33mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 300mA, 2V
Power - Max	625 mW
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	TSM

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