DN0150ALP4-7 Details_DN0150ALP4-7 PDF Document_Diodes Incorporated-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 6V
Power - Max	450 mW
Frequency - Transition	60MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Supplier Device Package	X2-DFN1006-3

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