2SC5439(F) Details_2SC5439(F) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	450 V
Vce Saturation (Max) @ Ib, Ic	1V @ 640mA, 3.2A
Current - Collector Cutoff (Max)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 1A, 5V
Power - Max	2 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220NIS

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