FJPF2145TU Details_FJPF2145TU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	ESBC™
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	5 A
Voltage - Collector Emitter Breakdown (Max)	800 V
Vce Saturation (Max) @ Ib, Ic	2V @ 300mA, 1.5A
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 200mA, 5V
Power - Max	40 W
Frequency - Transition	15MHz
Operating Temperature	-55°C ~ 125°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220F

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