BCX56-10R1 Details_BCX56-10R1 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA, 2V
Power - Max	1.56 W
Frequency - Transition	130MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	SOT-89-3

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