TPC6503(TE85L,F,M) Details_TPC6503(TE85L,F,M) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	U-MOSVII
Package	Tape & Reel (TR)
Transistor Type	NPN
Current - Collector (Ic) (Max)	1.5 A
Voltage - Collector Emitter Breakdown (Max)	30 V
Vce Saturation (Max) @ Ib, Ic	120mV @ 10mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	400 @ 150mA, 2V
Power - Max	1.6 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	VS-6 (2.9x2.8)

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