CP788X-2N2605-WN Details_CP788X-2N2605-WN PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	-
Current - Collector (Ic) (Max)	30 mA
Voltage - Collector Emitter Breakdown (Max)	45 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 500µA, 5V
Power - Max	400 mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

Other

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