DI13001 Details_DI13001 PDF Document_Diotec Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Current - Collector (Ic) (Max)	250 mA
Voltage - Collector Emitter Breakdown (Max)	450 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 20mA, 100mA
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 50mA, 5V
Power - Max	800 mW
Frequency - Transition	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

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