2SA10960Q Details_2SA10960Q PDF Document_Panasonic Electronic Components-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	1V @ 150mA, 1.5A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Power - Max	1.2 W
Frequency - Transition	150MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-126B-A1

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