SE9401 Details_SE9401 PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP - Darlington
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 150mA, 7.5A
Current - Collector Cutoff (Max)	200µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 7.5A, 3V
Power - Max	70 W
Frequency - Transition	-
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

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