NTE342 Details_NTE342 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	17 V
Vce Saturation (Max) @ Ib, Ic	-
Current - Collector Cutoff (Max)	500µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 100mA, 10V
Power - Max	1.5 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

Other

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