FJP5304DTU Details_FJP5304DTU PDF Document_Fairchild Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	400 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max)	250mA
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 2A, 5V
Power - Max	70 W
Frequency - Transition	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3

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