BUX87 Details_BUX87 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	450 V
Vce Saturation (Max) @ Ib, Ic	1V @ 20mA, 200mA
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	12 @ 40mA, 5V
Power - Max	40 W
Frequency - Transition	20MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	SOT-32-3

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