FJAF6916TU Details_FJAF6916TU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	16 A
Voltage - Collector Emitter Breakdown (Max)	800 V
Vce Saturation (Max) @ Ib, Ic	3V @ 2.5A, 10A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	6 @ 8.5A, 5V
Power - Max	60 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Supplier Device Package	TO-3PF

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