2SB1030ARA Details_2SB1030ARA PDF Document_Panasonic Electronic Components-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Cut Tape (CT)Tape & Box (TB)
Transistor Type	PNP
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 150mA, 10V
Power - Max	300 mW
Frequency - Transition	120MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	3-SSIP
Supplier Device Package	NS-B1

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