NTE330 Details_NTE330 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	25 A
Voltage - Collector Emitter Breakdown (Max)	40 V
Vce Saturation (Max) @ Ib, Ic	700mV @ 4A, 25A
Current - Collector Cutoff (Max)	300µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 15A, 4V
Power - Max	87.5 W
Frequency - Transition	-
Operating Temperature	-65°C ~ 90°C (TJ)
Mounting Type	Stud Mount
Package / Case	TO-36 (2 Leads + Case)
Supplier Device Package	TO-36

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