2N3637UB/TR Details_2N3637UB/TR PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	PNP
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	175 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 10V
Power - Max	1.5 W
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, No Lead
Supplier Device Package	UB

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